64 Mbit SPI Serial Dual I/O Flash
A Microchip Technology Company
SST25VF064C
Data Sheet
Page-Program
The page-Program instruction programs up to 256 bytes of data in the memory. The selected page
address must be in the erased state (FFH) before initiating the Page-Program operation. A Page-Pro-
gram applied to a protected memory area will be ignored.
Prior to the program operation, the Write-Enabled (WREN) instruction must be executed. CE# must
remain active low for the duration of the Page-Program instruction. The Page-Program instruction is
initiated by executing an 8-bit command, 02H, followed by address bits A23-A0. Following the address,
at least one byte is needed for the data input. CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status register or wait T PP for the completion of
the internal self-timed Page-Program operation. See Figure 10 for the Page-Program sequence.
For Page-Program, the memory range for SST25VF064C is set in 256 byte page boundaries. The
device handles shifting of more than 256 bytes of data by keeping the last 256 bytes of data shifted as
the correct data to be programmed. If the target address for the Page-Program instruction is not the
beginning of the page boundary (A7-A0 are not all zero) and the number of data input exceeds or over-
laps the end of the address of the page boundary, the excess data inputs will wrap around and will be
programmed at the start of that target page.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
SCK
MODE 0
SI
02
ADD.
ADD.
ADD.
Data Byte 1
SO
MSB
LSB MSB
HIGH IMPEDANCE
LSB MSB
LSB
CE#
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
SCK
SI
Data Byte 2
Data Byte 3
Data Byte 256
MSB
LSB MSB
LSB
MSB
LSB
SO
HIGH IMPEDANCE
1392 F30.0
Figure 10: Page-Program Sequence
?2011 Silicon Storage Technology, Inc.
16
DS25036A
06/11
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